Goford SemiconductorTaiwan, China
MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-220F |
| Other | |
| Ciss (pF) | 2100 |
| Compliance | RoHS,Halogen Free |
| Crss (pF) | 5 |
| ESD Diode | NO |
| Id (A) | 30 |
| Pd (W) | 45 |
| Qgd (nC) | 38 |
| Qg (nC) | 68 |
| Qgs (nC) | 19 |
| Rds(on) mΩ(max) @Vgs=10V | 110 |
| Rds(on) mΩ(typ) @Vgs=10V | 86 |
| Technology | SUPER JUNCTION |
| Type | N |
| Vds (V) | 650 |
| Vgs(th) max(V) | 4.6 |
| Vgs (V) | ±30 |