SUPSiC(国晶微半导体)China
国晶微半导体 GC3M0350120D — SiC 碳化硅 MOSFET
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View full reportTechnical parameters
| Power | |
|---|---|
| 阻断电压 | 1200 V |
| 额定电流 | 7.6 A |
| AC and DC characteristics | |
| 阻抗Ron | 350 mΩ |
| Environment and package | |
| 封装 | TO-247-3 |
| Other | |
| 功率Ptot | 50 W |
| 型号 | GC3M0350120D |
| 总栅极电荷 | 19 nC |
| 输出电容 | 20 pF |
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