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Technical parameters

Key specs

Reverse voltage1 kV
Forward voltage1.2 VMax · TA = 25 °C

Datasheet-verified parameters

18 items
ParameterValue and test conditionsSource
Max. repetitive peak reverse voltage1000 V
Max. average forward rectified current1.0 A at TL = 125 °C
Max. instantaneous forward voltage1.2 V at 1.0 A, TA = 25 °C
Diode typeSurface-Mount Glass Passivated Rectifier
PackageGF1 (DO-214BA)
Operating junction and storage temperature range-65 to +175 °C
GradeAEC-Q101 qualified
RoHS CompliantRoHS COMPLIANT
Max. DC blocking voltage1000 V
Max. RMS voltage700 V
Peak forward surge current30 A, 8.3 ms single half sine-wave superimposed on rated load
Max. DC reverse current5.0 μA at TA = 25 °C, rated DC blocking voltage
Max. DC reverse current (High Temp)50 μA at TA = 125 °C, rated DC blocking voltage
Typical reverse recovery time2.0 μs at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical junction capacitance15 pF at 4.0 V, 1 MHz
Device marking codeGM
Circuit configurationSingle
Max. junction temperature175 °C
All parameters (7)ExpandCollapse
Power
Max. average forward rectified current at TL = 125 °C1.0 A
Max. DC reverse current at rated DC blocking voltage5.0 μA (Max)
Max. instantaneous forward voltage1.2 V (Max)
Max. repetitive peak reverse voltage1000 V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load30 A
Environment and package
Operating junction and storage temperature range-65 to +175 °C
PackageGF1 (DO-214BA)

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