Vishay General Semiconductor - Diodes DivisionUnited States
DIODE GEN PURP 1KV 1A DO213AB
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Technical parameters
Key specs
Reverse voltage1 kV
Average rectified current1 A
Forward voltage1.2 VMax · 1 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 1 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -65°C~175°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-213AB, MELF (Glass) |
| Supplier Device Package | DO-213AB |
| Other | |
| Base Product Number | GL41 |
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Active |
| Series | SUPERECTIFIER® |
| Speed | Standard Recovery >500ns, > 200mA (Io) |