Goford SemiconductorTaiwan, China
SiC MOSFET
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Channel | N |
| Environment and package | |
| Package | TO-247-4 |
| Other | |
| Compliance | Automotive,RoHS,Halogen Free |
| ESD Diode | NO |
| Id (A) | 39 |
| Rds(ON) mΩ(max) @Vgs=20V | 85 |
| Tj (max) (°C) | 175 |
| Vds (V) | 1200 |
| Vgs(th) max (V) | 3.6 |
| Vgs(th) min (V) | 1.8 |
| Vgs (V) | -0.4 |