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Technical parameters

Power
ID-最大漏极电流3A
Id-额定电流3A
VDSS-最大漏源电压100V
Vgs(th)-门槛电压2.5V
AC and DC characteristics
RDS(on)-漏源导通阻抗185mΩ
Ron-最大导通阻抗185mΩ
Environment and package
封装类型1SOT223
Other
Ciss-输入电容820pF
Ciss-输入等效电容820pF
Qg-栅极电荷13.4nC
Vdss-漏源耐压100V
Vgs-栅源耐压20V
内置ESD保护二极管0
内置整流二极管0
引脚数量14
集成ESD保护二极管0
集成整流二极管0

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