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Technical parameters

Key specs

Channels1
Isolation voltage5 kV
Output typeTransistor
Current transfer ratio100 %10mA

Datasheet-verified parameters

19 items
ParameterValue and test conditionsSource
Channels1
Isolation Voltage5000 Vrms
Output TypePhototransistor
Package6-pin DIP
Operating Temperature-55 to 100 °C
RoHSCompliant
REACHCompliant
Forward Current60 mA
Peak Forward Current1 A (t = 10μs)
Input Power Dissipation120 mW (TA = 25°C)
Output Power Dissipation150 mW (TA = 25°C)
Collector-Emitter Voltage80 V
Collector-Base Voltage80 V
Emitter-Collector Voltage7 V
Total Power Dissipation200 mW
Storage Temperature-55 to 125 °C
Soldering Temperature260 °C (For 10 seconds)
Creepage Distance>7.62 mm
CertificationUL, cUL, VDE, SEMKO, NEMKO, DEMKO, FIMKO, CQC
All parameters (22)ExpandCollapse
Power
Current - DC Forward (If) (Max)60 mA
Current - Output / Channel-
Current Transfer Ratio (Max)-
Current Transfer Ratio (Min)100% @ 10mA
Number of Channels1
Voltage - Forward (Vf) (Typ)1.2V
Voltage - Isolation5000Vrms
Voltage - Output (Max)80V
AC and DC characteristics
Rise / Fall Time (Typ)10µs, 10µs (Max)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~100°C
PackageTube
Package / Case6-DIP (0.400", 10.16mm)
Supplier Device Package6-DIP
Other
Base Product NumberH11AA
Input TypeAC, DC
MfrEverlight Electronics Co Ltd
Output TypeTransistor with Base
Product StatusActive
Series-
Turn On / Turn Off Time (Typ)10µs, 10µs (Max)
Vce Saturation (Max)400mV

Pinout and package

Schematic
Schematic
Package: 6-pin DIP
PinNameFunctionSource
1Anode
2Cathode
3No Connection
4Emitter
5Collector
6Base

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