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Technical parameters

Power
IC-最大集电极电流0.1A
VCEO-CE结击穿电压50V
VCEO-集射级击穿电压50V
AC and DC characteristics
fT-变换频率NMHZ
hFE-最小直流增益80
Hfe-最小直流增益80
Environment and package
封装类型1SOT363
Other
偏置电阻R12.2KΩ
偏置电阻R247KΩ
引脚数量16

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