HL(富海微)China
HLC150N120W4
Single FETs, MOSFETsSiC;1个N沟道;VDSS:1200V;ID:150A;VGS:-4~22V;VTH:3.5V;RDS(ON):12mΩ;PD：675W
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Key specs
ChannelN-channel
Drain-source voltage1.2 kV
Continuous drain current150 A
| Power | |
|---|---|
| 漏源电压(Vdss) | 1.2kV |
| 连续漏极电流(Id) | 150A |
| Other | |
| 数量 | 1个N沟道 |
| 类型 | N沟道 |
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