All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Ic-最大集电极电流 | 0.15A |
| IC-最大集电极电流 | 0.15A |
| VCEO-CE结击穿电压 | 50V |
| VCEO-集射级击穿电压 | 50V |
| AC and DC characteristics | |
| fT-变换频率 | 80MHZ |
| hFE-最小直流增益 | 120 |
| Hfe-最小直流增益 | 120 |
| Environment and package | |
| 封装类型1 | SOT563 |
| 最大工作温度 | 150℃ |
| Other | |
| Pd-功率耗散 | 0.1W |
| Pd-最大功率耗散 | 0.1W |
| VCE(sat)-CE结饱和压降 | 0.3V |
| VCE(sat)-集射级饱和压降 | 0.3V |
| 引脚数量1 | 6 |
Documents
DatasheetDatasheet · 320.4 KB · 2026-09-22Catalog & SelectionCatalog & Selection · 8.7 MB · 2026-09-22Application NoteApplication Note · 804.7 KB · 2026-09-22Application NoteApplication Note · 637.1 KB · 2026-09-22Application NoteApplication Note · 556.0 KB · 2026-09-22Application NoteApplication Note · 542.7 KB · 2026-09-22Application NoteApplication Note · 533.0 KB · 2026-09-22
Open document center