DIODE GEN PURP 1KV 3A DO214AB
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Technical parameters
Key specs
Reverse voltage1 kV
Average rectified current3 A
Forward voltage1.7 VMax · 3 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | DO-214AB, SMC |
| Supplier Device Package | DO-214AB (SMC) |
| Other | |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Product Status | Active |
| Reverse Recovery Time (trr) | 75 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |