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Technical parameters

Power
ID-最大漏极电流75A
VDSS-最大漏源电压100V
Vgs(th)-门槛电压4.5V
AC and DC characteristics
RDS(on)-漏源导通阻抗14000mΩ
Environment and package
封装类型1TO263
封装类型2TO220
Other
Qg-栅极电荷NnC
内置ESD保护二极管0
内置整流二极管0
引脚数量13
引脚数量23

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