HUASHUO(华朔)China
双N沟道快速开关MOSFET，采用先进沟槽MOS技术，低栅极电荷和低导通电阻
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current30 A
On-resistance6 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 30A |
| Other | |
| 导通电阻(RDS(on)) | 6mΩ@10V |
| 数量 | 2个N沟道 |
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