HUASHUO(华朔)China
双路非对称N沟道CMOS FET，采用先进SGT MOS技术，低导通电阻，100% EAS保证，有环保型号
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current58 ~ 99 A<SPAN CLASS='LUCENE_HIGHLIGHT_CLASS'>99A</SPAN>
On-resistance4 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | <SPAN CLASS='LUCENE_HIGHLIGHT_CLASS'>99A</SPAN>；58A |
| 连续漏极电流(Id) | 99A；58A |
| Other | |
| 导通电阻(RDS(on)) | 4mΩ@10V |
| 数量 | 2个N沟道 |
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