HUASHUO(华朔)China
P沟道快速开关MOSFET，具备超低栅极电荷和先进的高单元密度沟槽技术
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage60 V
Continuous drain current9 A
On-resistance25 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 9A |
| Other | |
| 导通电阻(RDS(on)) | 25mΩ@10V |
| 数量 | 1个P沟道 |
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