HUASHUO(华朔)China
HSY012N10
Transistors - FETs, MOSFETs - SingleN沟道快速开关MOSFET，采用先进高单元密度SGT MOS技术，超低导通电阻
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current300 A
On-resistance1.25 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 100V |
| 连续漏极电流(Id) | 300A |
| Other | |
| 导通电阻(RDS(on)) | 1.25mΩ@10V |
| 数量 | 1个N沟道 |
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