INJOINIC(英集芯)China
锁谷/内置GaN/X电容泄放/零功耗
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View full reportTechnical parameters
| Power | |
|---|---|
| 待机功耗 | < 5mW |
| AC and DC characteristics | |
| 最高频率 | 72/95/138/184 kHz |
| Environment and package | |
| 封装 | DFN18(6*8) |
| Other | |
| 供电方式 | 辅助绕组 |
| 供电范围 | 6.5~75 V |
| 功率管 | 内置210mohm GaN |
| 包装 | 3K/盘 |
| 反馈模式 | SSR |
| 外置OTP | √ |
| 工作模式 | CCM+QR/QR |
| 特性 | 锁谷/内置GaN/X电容泄放/零功耗 |
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