International RectifierUnited States
MOSFET N-CH 75V 100A TO262
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage75 V
Continuous drain current100 A
On-resistance7.8 mΩMax · 78A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drain to Source Voltage (Vdss) | 75 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Package | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | TO-262 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |
| Mfr | International Rectifier |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 78A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |