Vishay SiliconixUnited States
MOSFET N-CH 100V 28A D2PAK
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current28 A
On-resistance77 mΩMax · 17A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 3.7W (Ta), 150W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D²PAK (TO-263) |
| Other | |
| Base Product Number | IRF540 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
| Mfr | Vishay Siliconix |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 17A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
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