Infineon TechnologiesGermany

IRF540ZPBF

ActiveTransistors - FETs, MOSFETs - SingleTO-220AB

MOSFET N-CH 100V 36A TO220AB

Infineon IRF540ZPBF is an N-channel HEXFET Power MOSFET with 100V breakdown voltage, 36A continuous drain current, TO-220AB package, operating temperature -55 to +175°C, featuring low on-resistance and lead-free construction.Checked against the datasheet

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 VMin 100 V (VGS = 0V，ID = 250μA)
Continuous drain current36 ATC = 25°C，VGS = 10V，TC = 100°C，VGS = 10V
On-resistance26.5 mΩMax · Max 26.5 mΩ (VGS = 10V，ID = 22A)
Gate threshold voltage4 VMax · Max 4.0 V (VDS = VGS，ID = 250μA)

Datasheet-verified parameters

28 items
ParameterValue and test conditionsSource
ChannelN-Channel
Drain-to-Source Breakdown VoltageMin 100 V (VGS = 0V, ID = 250μA)
Continuous Drain CurrentMax 36 A @ TC = 25°C, VGS = 10V; Max 25 A @ TC = 100°C, VGS = 10V
Static Drain-to-Source On-ResistanceTyp 21 mΩ, Max 26.5 mΩ (VGS = 10V, ID = 22A)
Gate Threshold VoltageMin 2.0 V, Max 4.0 V (VDS = VGS, ID = 250μA)
PackageTO-220AB
Operating Junction and Storage Temperature Range-55 to +175 °C
GradeIndustrial
RoHSLead-Free
Pulsed Drain CurrentMax 140 A
Power DissipationMax 92 W @ TC = 25°C
Gate-to-Source VoltageMax ±20 V
Single Pulse Avalanche EnergyMax 83 mJ (Thermally limited); Max 120 mJ (Tested)
Junction-to-Case Thermal ResistanceMax 1.64 °C/W
Junction-to-Ambient Thermal ResistanceMax 62 °C/W
Forward TransconductanceMin 36 S (VDS = 25V, ID = 22A)
Drain-to-Source Leakage CurrentMax 20 μA (VDS = 100V, VGS = 0V); Max 250 μA (VDS = 100V, VGS = 0V, TJ = 125°C)
Gate-to-Source Forward LeakageMax 200 nA (VGS = 20V)
Total Gate ChargeTyp 42 nC, Max 63 nC (ID = 22A, VDS = 80V, VGS = 10V)
Turn-On Delay TimeTyp 15 ns (VDD = 50V, ID = 22A, RG = 12Ω, VGS = 10V)
Rise TimeTyp 51 ns (VDD = 50V, ID = 22A, RG = 12Ω, VGS = 10V)
Turn-Off Delay TimeTyp 43 ns (VDD = 50V, ID = 22A, RG = 12Ω, VGS = 10V)
Fall TimeTyp 39 ns (VDD = 50V, ID = 22A, RG = 12Ω, VGS = 10V)
Input CapacitanceTyp 1770 pF (VGS = 0V, VDS = 25V, f = 1.0MHz)
Output CapacitanceTyp 180 pF (VGS = 0V, VDS = 25V, f = 1.0MHz)
Reverse Transfer CapacitanceTyp 100 pF (VGS = 0V, VDS = 25V, f = 1.0MHz)
Internal Drain InductanceTyp 4.5 nH
Internal Source InductanceTyp 7.5 nH
All parameters (21)ExpandCollapse
Power
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)92W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Other
Base Product NumberIRF540
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1770 pF @ 25 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs26.5mOhm @ 22A, 10V
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Documents

DatasheetDatasheet · 1.4 MB · 2026-11-12DatasheetDatasheet · 1.3 MB · 2026-11-09DatasheetDatasheet · 383.5 KB · 2026-09-21OtherOther · 27.2 KB · 2026-09-21OtherOther · 27.2 KB · 2026-09-21
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