Infineon TechnologiesGermany

IRF7341GTRPBF

ActiveTransistors - FETs, MOSFETs - ArraysSO-8

MOSFET N-CH 55V 5.1A

Infineon IRF7341GTRPBF is a dual N-channel HEXFET power MOSFET in SO-8 package, rated for 55V drain-source voltage and 5.1A continuous drain current, supporting 175°C junction temperature with low on-resistance and halogen-free features.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

22 items
ParameterValue and test conditionsSource
PackageSO-8
Junction and Storage Temperature Range-55 to + 175 °C
Qualification levelIndustrial (per JEDEC JESD47F guidelines)
RoHS compliantYes
Halogen-FreeHalogen-Free
Drain-to-Source Breakdown VoltageMin 55 V, $V_{GS} = 0V, I_D = 250μA$
Static Drain-to-Source On-ResistanceTyp 0.056 Ω, Max 0.065 Ω, $V_{GS} = 4.5V, I_D = 4.42A$
Gate Threshold VoltageMin 1.0 V, $V_{DS} = V_{GS}, I_D = 250μA$
Forward TransconductanceMin 10.4 S, $V_{DS} = 10V, I_D = 5.2A$
Drain-to-Source Leakage CurrentMax 25 μA, $V_{DS} = 44V, V_{GS} = 0V, T_J = 150°C$
Gate-to-Source Forward LeakageMax 100 nA, $V_{GS} = 20V$
Total Gate ChargeTyp 29 nC, Max 44 nC, $I_D = 5.2A$
Input CapacitanceTyp 780 pF, $V_{GS} = 0V$
Output CapacitanceTyp 190 pF, $V_{DS} = 25V$
Continuous Drain CurrentMax 4.2 A, $T_A = 70°C, V_{GS} = 10V$
Pulsed Drain CurrentMax 42 A
Maximum Power DissipationMax 1.7 W, $T_A = 70°C$
Gate-to-Source VoltageMax ± 20 V
Maximum Junction-to-Ambient Thermal ResistanceMax 62.5 °C/W
Single Pulse Avalanche EnergyMax 140 mJ
Avalanche CurrentMax 5.1 A
Moisture Sensitivity LevelMSL1 (per JEDEC J-STD-020D)
All parameters (18)ExpandCollapse
Power
Current - Continuous Drain (Id) @ 25°C5.1A
Drain to Source Voltage (Vdss)55V
Power - Max2.4W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Other
Base Product NumberIRF7341
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds780pF @ 25V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs50mOhm @ 5.1A, 10V
SeriesHEXFET®
Vgs(th) (Max) @ Id1V @ 250µA (Min)

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DatasheetDatasheet · 205.2 KB · 2026-11-09OtherOther · 27.2 KB · 2026-09-21OtherOther · 27.2 KB · 2026-09-21
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