Infineon TechnologiesGermany
MOSFET 2N-CH 55V 4.7A 8SO
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Technical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.7A |
| Drain to Source Voltage (Vdss) | 55V |
| Power - Max | 2W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Other | |
| Base Product Number | IRF734 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |