N-Channel MOSFET
VishayUnited States
MOSFET N-CH 500V 8A 0.85OHM D2PAK
Vishay IRF840S is an N-channel power MOSFET in D2PAK (TO-263) package, with 500V breakdown voltage, 8.0A continuous drain current, 0.85Ω on-resistance, operating temperature -55 to +150°C, featuring fast switching and repetitive avalanche capability.Checked against the datasheet
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage500 V
Continuous drain current5.1 ~ 8 A8.0 A (TC = 25 °C,VGS = 10 V),5.1 A (TC = 100 °C,VGS = 10 V)
On-resistance850 mΩMax · 0.85 Ω (VGS = 10 V)
Datasheet-verified parameters
20 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Channel | N-Channel | |
| Drain-Source Voltage | 500 V | |
| Continuous Drain Current | 8.0 A (TC = 25 °C, VGS = 10 V); 5.1 A (TC = 100 °C, VGS = 10 V) | |
| On-Resistance | 0.85 Ω (VGS = 10 V) | |
| Package | D2PAK (TO-263) | |
| Operating Junction and Storage Temperature Range | -55 to +150 °C |
All parameters (8)
| Power | |
|---|---|
| Continuous Drain Current | 8.0 A (TC = 25 °C) |
| Drain-Source Voltage | 500 V |
| Gate-Source Threshold Voltage | 2.0 V (Min) to 4.0 V (Max) |
| Maximum Power Dissipation | 125 W (TC = 25 °C) |
| Environment and package | |
| Operating Junction and Storage Temperature Range | -55 to +150 °C |
| Package | D2PAK (TO-263) |
| Other | |
| Drain-Source On-State Resistance | 0.85 Ω (Max) |
| Total Gate Charge | 63 nC (Max) |
Documents
Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.