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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current40 ~ 57 A57 A (TC = 25 °C,VGS = 10 V),40 A (TC = 100 °C,VGS = 10 V)
On-resistance28 mΩMax · 0.028 Ω (VGS = 10 V)

Datasheet-verified parameters

19 items
ParameterValue and test conditionsSource
ChannelN-Channel
Drain-Source Voltage60 V
Continuous Drain Current57 A (TC = 25 °C, VGS = 10 V); 40 A (TC = 100 °C, VGS = 10 V)
On-Resistance0.028 Ω (VGS = 10 V)
PackageTO-247
Operating Junction and Storage Temperature Range-55 to +175 °C
RoHSCompliant (IRFP044PbF); IRFP044 (SnPb) not compliant
Gate-Source Voltage±20 V
Pulsed Drain Current230 A
Maximum Power Dissipation180 W (TC = 25 °C)
Linear Derating Factor1.2 W/°C
Single Pulse Avalanche Energy53 mJ
Peak Diode Recovery dV/dt4.5 V/ns
Total Gate Charge95 nC (Max.)
Gate-Source Charge27 nC
Gate-Drain Charge46 nC
ConfigurationSingle
Soldering Recommendations (Peak Temperature)300 °C for 10 s
Mounting Torque10 lbf · in (1.1 N · m) for 6-32 or M3 screw
All parameters (7)ExpandCollapse
Power
Continuous Drain Current57 A (Max)
Drain-Source Voltage60 V
Maximum Power Dissipation180 W
Environment and package
Operating Junction and Storage Temperature Range-55 to +175 °C
PackageTO-247
Other
ConfigurationSingle
Drain-Source On-State Resistance0.028 Ω (Max)

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.