NXP USA Inc.Netherlands
MOSFET N-CH 55V 49A TO220AB
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage55 V
Continuous drain current49 A
On-resistance22 mΩMax · 25A
Gate threshold voltage4 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 110W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Other | |
| Base Product Number | IRFZ4 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
| Mfr | NXP USA Inc. |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |