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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage55 V
Continuous drain current49 AT_C = 25°C,V_GS = 10V
On-resistance17.5 mΩMax

Datasheet-verified parameters

22 items
ParameterValue and test conditionsSource
ChannelN-Channel
Drain-Source Breakdown Voltage55V
Continuous Drain Current49A @ T_C = 25°C, V_GS = 10V
On-Resistance17.5mΩ max
PackageTO-220
Operating Junction Temperature-55 to +175 °C
RoHSLead-Free
Maximum Power Dissipation94W @ T_C = 25°C
Pulsed Drain Current160A
Gate-to-Source Voltage±20V
Avalanche Current25A
Repetitive Avalanche Energy9.4mJ
Peak Diode Recovery dv/dt5.0V/ns
Junction-to-Case Thermal Resistance1.5°C/W max
Junction-to-Ambient Thermal Resistance62°C/W max
Total Gate Charge63nC @ I_D=25A, V_DS=44V, V_GS=10V
Input Capacitance1470pF max @ V_GS=0V, V_DS=25V, f=1.0MHz
Output Capacitance360pF max @ V_GS=0V, V_DS=25V, f=1.0MHz
Reverse Transfer Capacitance88pF max @ V_GS=0V, V_DS=25V, f=1.0MHz
Turn-On Delay Time12ns max @ V_DD=28V, I_D=25A, R_G=12Ω, V_GS=10V
Turn-Off Delay Time44ns max @ V_DD=28V, I_D=25A, R_G=12Ω, V_GS=10V
Single Pulse Avalanche Energy5305mJ max @ I_AS=25A, L=0.47mH
All parameters (7)ExpandCollapse
Environment and package
Package TypeTO-220
Other
ID @ TC = 25°C49 A (Max)
PD @ TC = 25°C94 W (Max)
RDS(on)17.5 mΩ (Max)
TJ TSTG-55 to +175 °C
V(BR)DSS55 V (Min)
VGS±20 V (Max)

Pinout and package

PackageTO-220

PinNameFunctionSource
1Gate
2Drain
3Source

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.