VBsemi(微碧半导体)China
IRFZ44NSTRLPBF-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；TO263；N—Channel沟道,60V；120A；RDS(ON)=7mΩ@VGS=10V,VGS=20V；Vth=1~3V；是一款单极性N型MOSFET，采用Trench工艺制造，适用于电源模块、汽车电子、工业控制、LED照明等领域。
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current75 A
On-resistance12 mΩMax · 4.5V
Gate threshold voltage3 VMax · 250uA
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 75A |
| 阈值电压(Vgs(th)) | 3V@250uA |
| Other | |
| 导通电阻(RDS(on)) | 12mΩ@4.5V |