Infineon TechnologiesGermany
MOSFET N-CH 100V 36A D2PAK
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current36 A
On-resistance44 mΩMax · 18A
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Cut Tape (CT) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 18A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |