Infineon TechnologiesGermany
MOSFET N-CH 30V 1.2A SOT-23
All alternatives
View full report2 alternatives on file. Sign in to view them.
Technical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current1.2 A
On-resistance250 mΩMax · 910mA
Gate threshold voltage1 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | Micro3™/SOT-23 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 910mA, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |