HEXFET® Power MOSFET
Infineon TechnologiesGermany
MOSFET P-CH 12V 4.3A SOT-23
Infineon IRLML6401PBF is a P-Channel HEXFET Power MOSFET with -12V breakdown voltage, 0.05Ω on-resistance, in Micro3 (SOT-23) package, featuring low profile, fast switching, and RoHS compliance.Checked against the datasheet
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Technical parameters
Key specs
ChannelP-channel
Drain-source voltage-12 VMin: -12 V (VGS = 0V，ID = -250μA)
Continuous drain current-4.3 AMax: -4.3 A (TA = 25°C，VGS = -4.5V)，Max: -3.4 A (TA = 70°C，VGS = -4.5V)
On-resistance50 mΩMax · Max: 0.050 Ω (VGS = -4.5V，ID = -4.3A)，Max: 0.085 Ω (VGS = -2.5V，ID = -2.5A)，Max: 0.125 Ω (VGS = -1.8V，ID = -2.0A)
Gate threshold voltage-950 mVMax · Max: -0.95 V (VDS = VGS，ID = -250μA)
Datasheet-verified parameters
26 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Channel | P-Channel | |
| Drain-to-Source Breakdown Voltage | Min: -12 V (VGS = 0V, ID = -250μA) | |
| Continuous Drain Current | Max: -4.3 A (TA = 25°C, VGS = -4.5V); Max: -3.4 A (TA = 70°C, VGS = -4.5V) | |
| Static Drain-to-Source On-Resistance | Max: 0.050 Ω (VGS = -4.5V, ID = -4.3A); Max: 0.085 Ω (VGS = -2.5V, ID = -2.5A); Max: 0.125 Ω (VGS = -1.8V, ID = -2.0A) | |
| Gate Threshold Voltage | Min: -0.40 V, Typ: -0.55 V, Max: -0.95 V (VDS = VGS, ID = -250μA) | |
| Package | Micro3™ (SOT-23) |
All parameters (7)
| Environment and package | |
|---|---|
| Package Type | Micro3TM (SOT-23) |
| Other | |
| I_{D} @ T_{A} = 25^{}C | -4.3 A (Max) |
| P_{D} @ T_{A} = 25^{}C | 1.3 W (Max) |
| R_{DS(on)} | 0.050 Ω (Max) |
| T_{J}, T_{STG} | -55 to + 150 °C |
| V_{DSS} | -12 V |
| V_{GS(th)} | -0.55 V (Typ) |
Pinout and package
HEXFET® Power MOSFET
| Pin | Name | Function | Source |
|---|---|---|---|
| 1 | Gate (G) | ||
| 2 | Source (S) | ||
| 3 | Drain (D) |
Documents
Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.