Infineon TechnologiesGermany
IRLR3636 is a N-channel power MOSFETs with VDS max: 60 V, RDS (on) max: 6.8 mOhm, Package: DPAK (TO-252), Technology: IR MOSFET™, ID max: 99 A
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Key specs
Gate threshold voltage1.75 VMax
| Environment and package | |
|---|---|
| Moisture Sensitivity Level | 1 |
| Mounting | SMD |
| Operating Temperature range | -55 °C to 175 °C |
| Package | DPAK (TO-252) |
| Other | |
| ID (@25°C) max | 99 A |
| Polarity | N |
| Ptot max | 143 W |
| Qgd | 15 nC |
| QG (typ @4.5V) | 33 nC |
| RDS (on) (typ @10V) max | 6.8 mΩ |
| RDS (on) (typ @4.5V) max | 8.3 mΩ |
| RthJC max | 1.05 K/W |
| Special Features | Logic Level |
| Tj max | 175 °C |
| VDS max | 60 V |
| VGS max | 16 V |
| VGS(th) | 1.75 V |
| VGS(th) range | 1 V to 2.5 V |