minos(迈诺斯)China
IRS21867-MNS
Gate Drivers驱动配置:半桥 负载类型:IGBT；MOSFET 驱动通道数:2 灌电流(IOL):4A 描述：这是一款高压、高速功率MOSFET/IGBT高低侧驱动芯片，广泛应用于电机驱动、逆变器、电源转换等领域
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View full reportTechnical parameters
Key specs
Driven configurationHalf-bridge
Peak output current4 AMax
| Power | |
|---|---|
| 拉电流(IOH) | 4A |
| 灌电流(IOL) | 4A |
| Other | |
| 负载类型 | MOSFET；IGBT |
| 驱动配置 | 半桥 |
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