ISSI, Integrated Silicon Solution IncUnited States
Automotive (Tc: -40 to +105C), 4
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View full reportTechnical parameters
Key specs
Memory typeDRAM
Memory size4 Gbit
InterfaceParallel
Clock frequency800 MHzMax
| Power | |
|---|---|
| Voltage - Supply | - |
| AC and DC characteristics | |
| Clock Frequency | 800 MHz |
| Environment and package | |
| Memory Size | 4Gbit |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 105°C |
| Package | Bulk |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-TWBGA (9x13) |
| Other | |
| DigiKey Programmable | Not Verified |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Memory Type | Volatile |
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Product Status | Active |
| Series | Automotive, AEC-Q100 |
| Technology | SDRAM - DDR3L |
| Write Cycle Time - Word, Page | - |