Microchip TechnologyUnited States
RH SMALL-SIGNAL BJT
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage150 V
Collector current300 mAMax
DC current gain40150mA
Power1 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| Current - Collector (Ic) (Max) | 300 mA |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Environment and package | |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Qualification | MIL-PRF-19500/366 |
| Supplier Device Package | TO-5AA |
| Other | |
| Mfr | Microchip Technology |
| Packaging | Bulk |
| Part Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
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