Samsung Semiconductor, Inc.South Korea
DDR3-1600 4GB (256MX16)1.25NS CL
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View full reportTechnical parameters
Key specs
Memory typeDRAM
Memory size4 Gbit
InterfaceParallel
Supply voltage≥ 1.35 V
Clock frequency800 MHzMax
| Power | |
|---|---|
| Voltage - Supply | 1.35V |
| AC and DC characteristics | |
| Clock Frequency | 800 MHz |
| Environment and package | |
| Memory Size | 4Gbit |
| Mounting Type | Surface Mount |
| Operating Temperature | 0°C ~ 95°C |
| Package | Tray |
| Package / Case | 96-TFBGA |
| Other | |
| DigiKey Programmable | Not Verified |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 256M x 16 |
| Memory Type | Volatile |
| Mfr | Samsung Semiconductor, Inc. |
| Product Status | Active |
| Series | - |
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