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Technical parameters

Power
Ic-最大集电极电流0.7A
IC-最大集电极电流0.7A
VCBO-CB结击穿电压80V
VCBO-集基级击穿电压80V
VCEO-CE结击穿电压60V
VCEO-集射级击穿电压60V
VEBO-EB结击穿电压8V
VEBO-射基级击穿电压8V
AC and DC characteristics
fT-变换频率100MHZ
hFE-最小直流增益40
Hfe-最小直流增益40
Environment and package
封装类型1TO-92L
封装类型2TO-92
Other
Pd-功率耗散0.75W
Pd-最大功率耗散0.75W
VCE(sat)-CE结饱和压降1.2V
VCE(sat)-集射级饱和压降1.2V
引脚数量13
引脚数量23

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