HXY MOSFET(华轩阳电子)China
输入偏置电流IB:5nA,输入失调电压(Vos):5mV,
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View full reportTechnical parameters
| Power | |
|---|---|
| 输入偏置电流IB | 5nA |
| AC and DC characteristics | |
| 输入失调电压(Vos) | 5mV |
| Environment and package | |
| 封装 | SOP-8 |
输入偏置电流IB:5nA,输入失调电压(Vos):5mV,
| Power | |
|---|---|
| 输入偏置电流IB | 5nA |
| AC and DC characteristics | |
| 输入失调电压(Vos) | 5mV |
| Environment and package | |
| 封装 | SOP-8 |