The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently. In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.
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View full reportTechnical parameters
| Power | |
|---|---|
| Bootstrap supply voltage (max) (V) | 100 |
| Channel input logic | TTL |
| Input supply voltage (max) (V) | 5.5 |
| Input supply voltage (min) (V) | 4.5 |
| Peak output current (A) | 5 |
| Power switch | GaNFET, MOSFET |
| Switch node voltage (V) | -5 |
| Undervoltage lockout (typ) (V) | 4 |
| AC and DC characteristics | |
| Fall time (ns) | 3.5 |
| Propagation delay time (µs) | 0.03 |
| Rise time (ns) | 7 |
| Environment and package | |
| Operating temperature range (°C) | -40 to 125 |
| Other | |
| Driver configuration | Half bridge |
| Features | Bootstrap supply voltage clamp, Split outputs on high and low side |
| Input threshold | TTL |
| Iq (mA) | 0.15 |
| Rating | Automotive |