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View full reportTechnical parameters
| Power | |
|---|---|
| IC-最大集电极电流 | 10A |
| VCBO-集基级击穿电压 | 500V |
| VCEO-CE结击穿电压 | 400V |
| VCEO-集射级击穿电压 | 400V |
| VEBO-射基级击穿电压 | 8V |
| AC and DC characteristics | |
| fT-变换频率 | 10MHZ |
| hFE-最小直流增益 | 30 |
| Hfe-最小直流增益 | 30 |
| Environment and package | |
| 封装类型1 | TO3 |
| 最大工作温度 | 200℃ |
| Other | |
| Pd-功率耗散 | 150W |
| VCE(sat)-集射级饱和压降 | 1.9V |
| 引脚数量1 | 3 |
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