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Technical parameters

Key specs

TypePNP
Collector-emitter voltage400 V
Collector current8 AMax
DC current gain152A
Power125 WMax
Power
Current - Collector Cutoff (Max)500µA
Current - Collector (Ic) (Max)8 A
Power - Max125 W
Voltage - Collector Emitter Breakdown (Max)400 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 2A, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~200°C(TJ)
PackageTube
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-3
Other
Base Product NumberMJ6503
MfrCentral Semiconductor Corp
Product StatusObsolete
SeriesMJ6503
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic5V @ 3A, 8A

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