Cmos(广东场效应半导体)China

MJD122G

Single Bipolar Transistors
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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current8 AMax
Power
集射极击穿电压(Vceo)100V
集电极电流(Ic)8A
Other
类型NPN

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DatasheetDatasheet · 2.0 MB · 2026-09-21DatasheetDatasheet · 1.0 MB · 2026-09-21
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