CJ(江苏长电/长晶)China

MJD41C

Bipolar Transistors - Unspecified Type
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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
DC current gain300.3A
Power1.25 WMax
Power
集射极击穿电压(Vceo)100V
AC and DC characteristics
直流电流增益(hFE)30@0.3A,4V
Other
晶体管类型NPN
耗散功率(Pd)1.25W

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