minos(迈诺斯)China
MLG50T65FDK
IGBT Devices and Modules - Unspecified Type采用先进的沟槽栅场截止技术(Trench FS技术)，集射极击穿电压Vces=650V，集电极电流Ic=50A，具有导通压降低和关断损耗小等优点，适用于光伏逆变，储能，UPS，电焊等应用场景
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View full reportTechnical parameters
Key specs
Collector-emitter voltage650 V
Collector current100 AMax
Power300 WMax
| Power | |
|---|---|
| 集射极击穿电压(Vces) | 650V |
| 集电极电流(Ic) | 100A |
| Other | |
| IGBT类型 | FS(场截止) |
| 耗散功率(Pd) | 300W |
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