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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
Collector current600 mAMax
DC current gain100150mA
Power350 mWMax
Power
Current - Collector Cutoff (Max)10µA (ICBO)
Current - Collector (Ic) (Max)600 mA
Power - Max350 mW
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition250MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
Other
MfrFairchild Semiconductor
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA

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