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Technical parameters

Key specs

TypePNP
Collector-emitter voltage-150 V
Collector current-600 mAMax
DC current gain6060 to 240 (IC = -10 mA,VCE = -5.0 V)
Power350 mWMax
Power
Collector Current (IC)-600 mA
Collector-Emitter Saturation Voltage (VCE(sat))-0.2 V (Max) (IC = -10 mA, IB = -1.0 mA)
Collector-Emitter Voltage (VCEO)-150 V
Power Dissipation (PD)350 mW (Max)
AC and DC characteristics
Current Gain Bandwidth Product (fT)100 to 300 MHz
DC Current Gain (hFE)60 to 240 (IC = -10 mA, VCE = -5.0 V)
Environment and package
Operating Temperature-55 to +150 °C
PackageSOT-23 3L
Other
Transistor TypePNP

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