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Technical parameters

Power
IC-最大集电极电流0.5A
VCBO-集基级击穿电压300V
VCEO-集射级击穿电压300V
VEBO-射基级击穿电压6V
AC and DC characteristics
fT-变换频率NMHZ
hFE-最小直流增益25
Environment and package
封装类型1SOT89
Other
Pd-功率耗散0.35W
VCE(sat)-集射级饱和压降0.5V
引脚数量13

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