Panjit International Inc.Taiwan, China
NPN HIGH VOLTAGE TRANSISTOR
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage300 V
Collector current500 mAMax
DC current gain4030mA
Power150 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 500 mA |
| Power - Max | 150 mW |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SOT-323 |
| Other | |
| Base Product Number | MMBTA42 |
| Mfr | Panjit International Inc. |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Part Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |