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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage400 V
Collector current300 mAMax
DC current gain5010mA
Power250 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)300 mA
Power - Max250 mW
Voltage - Collector Emitter Breakdown (Max)400 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 10V
Frequency - Transition50MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageStrip
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Other
MfrDiotec Semiconductor
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic750mV @ 5mA, 50mA

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