MMBTA56
Yangjie TechnologyChina

MMBTA56

ActiveTransistors - Bipolar (BJT) - SingleSOT-23

SOT-23 PNP 0.225W -0.5A -80V Tra

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Technical parameters

Key specs

TypePNP
Collector-emitter voltage80 V
Collector current500 mAMax
DC current gain100100mA
Power225 mWMax
Power
Current - Collector Cutoff (Max)100nA
Current - Collector (Ic) (Max)500 mA
Power - Max225 mW
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition50MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
Other
MfrYangjie Technology
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA

Documents

DatasheetDatasheet · 460.8 KB · 2026-09-22EnvironmentalEnvironmental · 5.9 MB · 2026-09-22EnvironmentalEnvironmental · 5.8 MB · 2026-09-22EnvironmentalEnvironmental · 1.5 MB · 2026-09-22EnvironmentalEnvironmental · 1.4 MB · 2026-09-22Package DrawingPackage Drawing · 265.5 KB · 2026-09-22
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