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Technical parameters

Power
IC-最大集电极电流0.1A
VCBO-集基级击穿电压50V
VCEO-集射级击穿电压50V
AC and DC characteristics
fT-变换频率NMHZ
hFE-最小直流增益70
Environment and package
封装类型1SOT23
Other
Pd-功率耗散0.2W
VCE(sat)-集射级饱和压降0.3V
偏置电阻R122KΩ
偏置电阻R222KΩ
引脚数量13

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